APA:
Balent, Jošt, Smole, Franc, Topič, Marko, Krč, Janez (2022). Analysis of effects of dangling-bond defects in doped a-Si:H layers in heterojunction silicon solar cells with different electron affinities of ITO contacts.
Informacije MIDEM, letnik 52, številka 2, str. 129-142.
URN:NBN:SI:DOC-9FKZBU74 from http://www.dlib.si
MLA:
Balent, Jošt, Smole, Franc, Topič, Marko, Krč, Janez. "Analysis of effects of dangling-bond defects in doped a-Si:H layers in heterojunction silicon solar cells with different electron affinities of ITO contacts."
Informacije MIDEM letnik 52. številka 2 (2022) str. 129-142.
<http://www.dlib.si/?URN=URN:NBN:SI:DOC-9FKZBU74>