APA:
Lakshmi Priya, G., Balamurugan, N.B. (2018). Subthreshold modeling of triple material gate-all-around junctionless tunnel FET with germanium and high-K gate dielectric material.
Informacije MIDEM, letnik 48, številka 1, str. 53-61.
URN:NBN:SI:DOC-3HXZ7REL from http://www.dlib.si
MLA:
Lakshmi Priya, G., Balamurugan, N.B.. "Subthreshold modeling of triple material gate-all-around junctionless tunnel FET with germanium and high-K gate dielectric material."
Informacije MIDEM letnik 48. številka 1 (2018) str. 53-61.
<http://www.dlib.si/?URN=URN:NBN:SI:DOC-3HXZ7REL>