APA:
See, J. H., Arshad, Mohd Khairuddin Md, Fathil, M. F. M., Voon, C. H., Hashim, U., Gopinath, Subash C. B. (2017). DOE study of epitaxial layer thickness and resistivity effects on P-i-N diode for beyond 300 V of reverse voltage applications.
Informacije MIDEM, letnik 47, številka 1, str. 24-31.
URN:NBN:SI:DOC-EGXLCILB from http://www.dlib.si
MLA:
See, J. H., Arshad, Mohd Khairuddin Md, Fathil, M. F. M., Voon, C. H., Hashim, U., Gopinath, Subash C. B.. "DOE study of epitaxial layer thickness and resistivity effects on P-i-N diode for beyond 300 V of reverse voltage applications."
Informacije MIDEM letnik 47. številka 1 (2017) str. 24-31.
<http://www.dlib.si/?URN=URN:NBN:SI:DOC-EGXLCILB>