<Record><identifier xmlns="http://purl.org/dc/elements/1.1/">URN:NBN:SI:doc-XW111NQ3</identifier><date>2001</date><creator>Rath, J. K...</creator><creator>Schropp, R. E. I.</creator><creator>Stannowski, B...</creator><relation>documents/doc/X/URN_NBN_SI_doc-XW111NQ3_001.pdf</relation><relation>documents/doc/X/URN_NBN_SI_doc-XW111NQ3_001.txt</relation><format format_type="volume">31</format><format format_type="issue">4</format><format format_type="type">article</format><format format_type="extent">str. 220-227</format><identifier identifier_type="ISSN">0352-9045</identifier><identifier identifier_type="COBISSID">2690388</identifier><identifier identifier_type="URN">URN:NBN:SI:doc-XW111NQ3</identifier><language>eng</language><publisher>Strokovno društvo za mikroelektroniko, elektronske sestavne dele in materiale</publisher><source>Informacije MIDEM</source><rights>InC</rights><subject language_type_id="slv">nanosi</subject><subject language_type_id="slv">polprevodniki</subject><subject language_type_id="slv">tankoplastni tranzistorji</subject><subject language_type_id="slv">tehnologija vroče žice</subject><title>Hot wire deposited materials for thin film transistors</title><title>Nanos materialov z metodo vroče žice pri izdelavi tankoplastnih tranzistorjev</title></Record>