335 KB13 KB198520251999Chab, V.Drobnič, MatijaEvangelakis, G.A.Jagielski, JacekMozetič, MiranZalar, Antonletnik:29številka:3str. 117-120ISSN:0352-9045COBISSID:1726036URN:URN:NBN:SI:doc-VACFRN8TenStrokovno društvo za mikroelektroniko, elektronske sestavne dele in materialeInformacije MIDEMimplantacijaionimikroelektronikapovršinetanke plastititanov dioksidPreparation of thin coatings of titanium compounds with ion implantation| Priprava tankih prevlek titanovih spojin z ionsko implantacijo|The growth of thin coatings of titanium oxide and nitride during ion implantation of respective ions into titanium substrate was studied theoretically and experimentally. The IBM SRIM software was used to determine the concentration profiles of implanted ions, the sputtering rate, probability of back - scattering and ion energy loss mechanisms. Theoretical results were compared with experiments. Samples of pure titanium plates were carefully polished and exposed to a flux of oxygen and nitrogen ions with the kinetic energy of 100 keV per molecule (50 keV per atom). The ion doses were 5x10sup16, 1x10sup17, 2.5x10sup17, 5x10sup17, 7.5x10sup17, 1x10sup18 atoms/cmsup2. Depth profiles of the samples were determined by the AES method. Both the theory and experiment showed that the ion range at the low dose was about 90 nm for the case of nitrogen, and 80 nm for the case of oxygen, with depth distribution typical for ion implantation. Experimental results showed that a layer of titanium compound with a constant composition was formed at the ion dose above 7.5x10sup17 atoms/cmsup2Prikazujemo rezultate teoretične in eksperimentalne preiskave rasti tankih plasti titanovega oksida in nitrida med ionsko implantacijo z ustreznimi ioni. Z uporabo programske opreme IBM SRIM smo določili koncentracijske profile implantiranih ionov, razprševanje titanovih atomov, verjetnost za odboj vpadnega iona od površine in mehanizme izgube kinetične energije ionov. Teoretične rezultate smo primerjali z eksperimentalnimi. Vzorce ploščic iz 5x10sup16, 1x10sup17, 2.5x10sup17, 5x10sup17, 7.5x10sup17,čistega titana smo gladko polirali in izpostavili toku kisikovih in dušikovih ionov s kinetično energijo 100 keV na molekulo (50 keV na atom). Doza ionov je bila 5x10na16, 1x10na17, 2.5x10na17, 5x10na17, 7.5x10na17 in 1x10na18 atomov/cmna2. Globinske profile vzorcev smo določili z metodo AES. Tako teoretični kot eksperimentalni rezultati so pokazali, da je doseg ionov približno 90 nm za dušik in 80 nm za kisik. Globinska porazdelitev elementov je bila značilna za tehniko ionske implantacije. Eksperimentalni rezultati so pokazali, da se formira tanka plast titanove spojine s konstantno sestavo pri dozi, ki je večja od 7x10na17 atomov/cmna2TEXTznanstveno časopisjejournalsSlovenian National E-content AggregatorNational and University Library of SloveniaStrokovno društvo za mikroelektroniko, elektronske sestavne dele in materiale