<Record><identifier xmlns="http://purl.org/dc/elements/1.1/">URN:NBN:SI:doc-ULDK28X9</identifier><date>2007</date><creator>Zarębski, Janusz</creator><relation>documents/doc/U/URN_NBN_SI_doc-ULDK28X9_001.pdf</relation><relation>documents/doc/U/URN_NBN_SI_doc-ULDK28X9_001.txt</relation><format format_type="issue">1</format><format format_type="volume">37</format><format format_type="type">article</format><format format_type="extent">str. 1-4</format><identifier identifier_type="ISSN">0352-9045</identifier><identifier identifier_type="COBISSID">6540116</identifier><identifier identifier_type="URN">URN:NBN:SI:doc-ULDK28X9</identifier><language>eng</language><publisher>Strokovno društvo za mikroelektroniko, elektronske sestavne dele in materiale</publisher><source>Informacije MIDEM</source><rights>InC</rights><subject language_type_id="slv">modeliranje</subject><subject language_type_id="slv">MOSFET</subject><subject language_type_id="slv">silicijev karbid</subject><subject language_type_id="slv">tranzistorji</subject><subject language_type_id="slv">upornost</subject><title>On-resistance of power MOSFETS</title></Record>