<?xml version="1.0"?><rdf:RDF xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:edm="http://www.europeana.eu/schemas/edm/" xmlns:wgs84_pos="http://www.w3.org/2003/01/geo/wgs84_pos" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:rdaGr2="http://rdvocab.info/ElementsGr2" xmlns:oai="http://www.openarchives.org/OAI/2.0/" xmlns:owl="http://www.w3.org/2002/07/owl#" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:ore="http://www.openarchives.org/ore/terms/" xmlns:skos="http://www.w3.org/2004/02/skos/core#" xmlns:dcterms="http://purl.org/dc/terms/"><edm:WebResource rdf:about="http://www.dlib.si/stream/URN:NBN:SI:doc-TZ59V20F/704ff62c-ef6f-4e15-aa6d-3f30e949b535/PDF"><dcterms:extent>2053 KB</dcterms:extent></edm:WebResource><edm:WebResource rdf:about="http://www.dlib.si/stream/URN:NBN:SI:doc-TZ59V20F/b4c6b47e-15a6-4d44-b009-204bf4d58cea/TEXT"><dcterms:extent>25 KB</dcterms:extent></edm:WebResource><edm:TimeSpan rdf:about="1985-2026"><edm:begin xml:lang="en">1985</edm:begin><edm:end xml:lang="en">2026</edm:end></edm:TimeSpan><edm:ProvidedCHO rdf:about="URN:NBN:SI:doc-TZ59V20F"><dcterms:isPartOf rdf:resource="https://www.dlib.si/details/URN:NBN:SI:spr-Z2J12Z6C" /><dcterms:issued>2025</dcterms:issued><dc:creator>Li, Li</dc:creator><dc:creator>Liu, Jian</dc:creator><dc:format xml:lang="sl">številka:1</dc:format><dc:format xml:lang="sl">letnik:55</dc:format><dc:format xml:lang="sl">str. 65-72</dc:format><dc:identifier>ISSN:0352-9045</dc:identifier><dc:identifier>DOI:10.33180/InfMIDEM2025.106</dc:identifier><dc:identifier>COBISSID_HOST:281429251</dc:identifier><dc:identifier>URN:URN:NBN:SI:doc-TZ59V20F</dc:identifier><dc:language>en</dc:language><dc:publisher xml:lang="sl">Strokovno društvo za mikroelektroniko, elektronske sestavne dele in materiale</dc:publisher><dcterms:isPartOf xml:lang="sl">Informacije MIDEM</dcterms:isPartOf><dc:subject xml:lang="sl">CMOS</dc:subject><dc:subject xml:lang="en">Current-reused</dc:subject><dc:subject xml:lang="en">low-noise amplifier (LNA)</dc:subject><dc:subject xml:lang="en">noise figure (NF)</dc:subject><dc:subject xml:lang="sl">ojačevalnik z nizkim šumom (LNA)</dc:subject><dc:subject xml:lang="sl">ponovna uporaba toka</dc:subject><dc:subject xml:lang="sl">vrednost šuma (NF)</dc:subject><dcterms:temporal rdf:resource="1985-2026" /><dc:title xml:lang="sl">A low-power and low-noise 4-12 GHz buck CMOS low-noise amplifier with current-reused technique| Ojačevalnik 4-12 GHz CMOS z nizko porabo energije in nizkim šumom s tehniko ponovne uporabe toka|</dc:title><dc:description xml:lang="sl">In this paper, a wideband fully integrated low-power and low-noise amplifier (LNA) is presented. It features an 8 GHz (from 4 GHz to 12 GHz) bandwidth and an excellent noise figure (NF) using 65 nm CMOS technology. This LNA was designed utilizing a current-reused technique and a cascode gain boost technique. In addition, the interstage inductors use series peaking to reduce the roll-off of high frequency gain and achieve high broadband gain. The proposed LNA circuit achieved high and flat power gain of 23.5±1 dB with input return loss less than -8 dB within the bandwidth of interest (4-12 GHz). The flat NF is 3.3±0.5 dB and the NFmin is a staggering 2.8 dB. Achieving the above performance, the third-order input point (IIP3) also reached -10.78 dBm, which is considered excellent. The LNA consumes 6.07 mW from a 1.2 V supply and occupies a layout area of 0.53x0.55 mm2 </dc:description><dc:description xml:lang="sl">V članku je predstavljen širokopasovni popolnoma integriran ojačevalnik (LNA) z nizko porabo energije in nizkim šumom. Ima 8 GHz (od 4 GHz do 12 GHz) pasovno širino in odlično šumno število (NF) z uporabo 65 nm tehnologije CMOS. LNA ojačevalnik je bil zasnovan z uporabo tehnike ponovne uporabe toka in tehnike kaskodnega povečanja ojačitve. Medstopenjske dušilke uporabljajo zaporedno ojačitev za zmanjšanje visokofrekvenčnega ojačenja in doseganje visokega širokopasovnega ojačenja. Predlagano vezje LNA je doseglo visoko ojačenje 23,5±1 dB z vhodno povratno izgubo, manjšo od -8 dB, znotraj pasovne širine (4-12 GHz). Ravna NF je 3,3±0,5 dB, NFmin pa je 2,8 dB. Pri doseganju zgornje zmogljivosti je vhodna točka tretjega reda (IIP3) prav tako dosegla -10,78 dBm. LNA porabi 6,07 mW pri napajanju z napetostjo 1,2 V in zavzema površino 0,53 × 0,55 mm2 </dc:description><edm:type>TEXT</edm:type><dc:type xml:lang="sl">znanstveno časopisje</dc:type><dc:type xml:lang="en">journals</dc:type><dc:type rdf:resource="http://www.wikidata.org/entity/Q361785" /></edm:ProvidedCHO><ore:Aggregation rdf:about="http://www.dlib.si/?URN=URN:NBN:SI:doc-TZ59V20F"><edm:aggregatedCHO rdf:resource="URN:NBN:SI:doc-TZ59V20F" /><edm:isShownBy rdf:resource="http://www.dlib.si/stream/URN:NBN:SI:doc-TZ59V20F/704ff62c-ef6f-4e15-aa6d-3f30e949b535/PDF" /><edm:rights rdf:resource="http://creativecommons.org/licenses/by/4.0/" /><edm:provider>Slovenian National E-content Aggregator</edm:provider><edm:intermediateProvider xml:lang="en">National and University Library of Slovenia</edm:intermediateProvider><edm:dataProvider xml:lang="sl">Strokovno društvo za mikroelektroniko, elektronske sestavne dele in materiale</edm:dataProvider><edm:object rdf:resource="http://www.dlib.si/streamdb/URN:NBN:SI:doc-TZ59V20F/maxi/edm" /><edm:isShownAt rdf:resource="http://www.dlib.si/details/URN:NBN:SI:doc-TZ59V20F" /></ore:Aggregation></rdf:RDF>