<Record><identifier xmlns="http://purl.org/dc/elements/1.1/">URN:NBN:SI:doc-TQNIGS13</identifier><date>2012</date><creator>Amon, Slavko</creator><creator>Dolžan, Tine</creator><creator>Možek, Matej</creator><creator>Pečar, Borut</creator><creator>Resnik, Drago</creator><creator>Vrtačnik, Danilo</creator><relation>documents/doc/T/URN_NBN_SI_doc-TQNIGS13_001.pdf</relation><relation>documents/doc/T/URN_NBN_SI_doc-TQNIGS13_001.txt</relation><format format_type="issue">2</format><format format_type="volume">32</format><format format_type="type">article</format><format format_type="extent">str. 4-7</format><identifier identifier_type="ISSN">0351-9716</identifier><identifier identifier_type="COBISSID">9312596</identifier><identifier identifier_type="URN">URN:NBN:SI:doc-TQNIGS13</identifier><language>slv</language><publisher>Društvo za vakuumsko tehniko Slovenije</publisher><source>Vakuumist</source><rights>InC</rights><subject language_type_id="eng">etch rate</subject><subject language_type_id="slv">hitrost jedkanja</subject><subject language_type_id="slv">MEMS</subject><subject language_type_id="slv">profil jedkanja</subject><subject language_type_id="eng">profile</subject><subject language_type_id="slv">RIE</subject><subject language_type_id="eng">selectivity of etching</subject><subject language_type_id="slv">selektivno jedkanje</subject><title>Reaktivno ionsko jedkanje (RIE) silicija na osnovi SFspodaj6/Ospodaj2-kemije</title></Record>