<Record><identifier xmlns="http://purl.org/dc/elements/1.1/">URN:NBN:SI:doc-MM4HMN7I</identifier><date>2008</date><creator>Jovanović, V.</creator><creator>Suligoj, Tomislav</creator><creator>Sviličić, Boris</creator><relation>documents/doc/M/URN_NBN_SI_doc-MM4HMN7I_001.pdf</relation><relation>documents/doc/M/URN_NBN_SI_doc-MM4HMN7I_001.txt</relation><format format_type="issue">1</format><format format_type="volume">38</format><format format_type="type">article</format><format format_type="extent">str. 1-4</format><identifier identifier_type="ISSN">0352-9045</identifier><identifier identifier_type="COBISSID">7566164</identifier><identifier identifier_type="URN">URN:NBN:SI:doc-MM4HMN7I</identifier><language>eng</language><publisher>Strokovno društvo za mikroelektroniko, elektronske sestavne dele in materiale</publisher><source>Informacije MIDEM</source><rights>InC</rights><subject language_type_id="slv">modeliranje</subject><subject language_type_id="slv">SONFET</subject><subject language_type_id="slv">tokovne karakteristike</subject><subject language_type_id="slv">tranzistorji</subject><title>modeliranje podpragovne tokovne karakteristike</title><title>subtreshold slope calculation using compact capacitance model</title><title>Vertical silicon-on-nothing FET</title><title>Vertikalni SONFET</title></Record>