<Record><identifier xmlns="http://purl.org/dc/elements/1.1/">URN:NBN:SI:doc-M5V7V31L</identifier><date>2012</date><creator>Gradišnik, Vera</creator><relation>documents/doc/M/URN_NBN_SI_doc-M5V7V31L_001.pdf</relation><relation>documents/doc/M/URN_NBN_SI_doc-M5V7V31L_001.txt</relation><format format_type="issue">1</format><format format_type="volume">42</format><format format_type="type">article</format><format format_type="extent">str. 23-28</format><identifier identifier_type="ISSN">0352-9045</identifier><identifier identifier_type="COBISSID">9955412</identifier><identifier identifier_type="URN">URN:NBN:SI:doc-M5V7V31L</identifier><language>eng</language><publisher>Strokovno društvo za mikroelektroniko, elektronske sestavne dele in materiale</publisher><source>Informacije MIDEM</source><rights>InC</rights><subject language_type_id="slv">defekti</subject><subject language_type_id="slv">fotodiode</subject><subject language_type_id="slv">karakterizacija</subject><subject language_type_id="slv">odziv</subject><title>Characterization of a-Si</title><title>H P-I-N fotodiode</title><title>H P-I-N photodiode response</title><title>Karakterizacija odziva a-Si</title></Record>