<Record><identifier xmlns="http://purl.org/dc/elements/1.1/">URN:NBN:SI:doc-KH3NS2LL</identifier><date>2001</date><creator>Gspan, Boštjan</creator><creator>Osredkar, Radko</creator><relation>documents/doc/K/URN_NBN_SI_doc-KH3NS2LL_001.pdf</relation><relation>documents/doc/K/URN_NBN_SI_doc-KH3NS2LL_001.txt</relation><format format_type="issue">1</format><format format_type="volume">31</format><format format_type="type">article</format><format format_type="extent">str. 53-55</format><identifier identifier_type="ISSN">0352-9045</identifier><identifier identifier_type="COBISSID">2257492</identifier><identifier identifier_type="URN">URN:NBN:SI:doc-KH3NS2LL</identifier><language>eng</language><publisher>Strokovno društvo za mikroelektroniko, elektronske sestavne dele in materiale</publisher><source>Informacije MIDEM</source><rights>InC</rights><subject language_type_id="slv">BiCMOS</subject><subject language_type_id="slv">integrirana vezja</subject><subject language_type_id="slv">mikroelektronika</subject><subject language_type_id="slv">tanke plasti</subject><title>A study of highly doped layers for BiCMOS collector inserts</title><title>Študija močno dopiranih plasti za BiCMOS kolektorske vložke</title></Record>