URN:NBN:SI:doc-JRH3UL5H2017Carrillo C., AmandaJiménez P., AbimaelMunoz G., J. AntonioQuevedo L., Manuel A.Tilvaldyev, Shehretdocuments/doc/J/URN_NBN_SI_doc-JRH3UL5H_001.pdfdocuments/doc/J/URN_NBN_SI_doc-JRH3UL5H_001.txt147articlestr. 32-390352-904512054100URN:NBN:SI:doc-JRH3UL5HengStrokovno društvo za mikroelektroniko, elektronske sestavne dele in materialeInformacije MIDEMInCchemical bath depositiondefectsdefektidensity of statesgostota stanjoptimizacijaoptimizationsimulacijesimulationtankoplastni tranzistorjithin film transistors2D simulacija TFT tipa p s kemijsko nanešenim aktivnim poli-PbS kanalom2D simulation study of p-type TFTs with chemically deposited poly-PbS active channel