{"?xml":{"@version":"1.0"},"edm:RDF":{"@xmlns:dc":"http://purl.org/dc/elements/1.1/","@xmlns:edm":"http://www.europeana.eu/schemas/edm/","@xmlns:wgs84_pos":"http://www.w3.org/2003/01/geo/wgs84_pos","@xmlns:foaf":"http://xmlns.com/foaf/0.1/","@xmlns:rdaGr2":"http://rdvocab.info/ElementsGr2","@xmlns:oai":"http://www.openarchives.org/OAI/2.0/","@xmlns:owl":"http://www.w3.org/2002/07/owl#","@xmlns:rdf":"http://www.w3.org/1999/02/22-rdf-syntax-ns#","@xmlns:ore":"http://www.openarchives.org/ore/terms/","@xmlns:skos":"http://www.w3.org/2004/02/skos/core#","@xmlns:dcterms":"http://purl.org/dc/terms/","edm:WebResource":[{"@rdf:about":"http://www.dlib.si/stream/URN:NBN:SI:doc-GKVJSX8R/d43a5a97-e25a-4e0d-a0bb-97c9420f83a8/PDF","dcterms:extent":"3204 KB"},{"@rdf:about":"http://www.dlib.si/stream/URN:NBN:SI:doc-GKVJSX8R/1438f6c2-5473-4496-a954-2ceb7b9e3214/TEXT","dcterms:extent":"22 KB"}],"edm:TimeSpan":{"@rdf:about":"1985-2025","edm:begin":{"@xml:lang":"en","#text":"1985"},"edm:end":{"@xml:lang":"en","#text":"2025"}},"edm:ProvidedCHO":{"@rdf:about":"URN:NBN:SI:doc-GKVJSX8R","dcterms:isPartOf":[{"@rdf:resource":"https://www.dlib.si/details/URN:NBN:SI:spr-Z2J12Z6C"},{"@xml:lang":"sl","#text":"Informacije MIDEM"}],"dcterms:issued":"2015","dc:creator":"Singh, Avtar","dc:format":[{"@xml:lang":"sl","#text":"številka:1"},{"@xml:lang":"sl","#text":"letnik:45"},{"@xml:lang":"sl","#text":"str. 73-79"}],"dc:identifier":["ISSN:0352-9045","COBISSID:280572416","URN:URN:NBN:SI:doc-GKVJSX8R"],"dc:language":"en","dc:publisher":{"@xml:lang":"sl","#text":"Strokovno društvo za mikroelektroniko, elektronske sestavne dele in materiale"},"dc:subject":[{"@xml:lang":"sl","#text":"masni sloj"},{"@xml:lang":"sl","#text":"mikroelektronika"},{"@xml:lang":"sl","#text":"MOSFED"},{"@xml:lang":"sl","#text":"tranzistorji"},{"@rdf:resource":"http://www.wikidata.org/entity/Q6850204"}],"dcterms:temporal":{"@rdf:resource":"1985-2025"},"dc:title":{"@xml:lang":"sl","#text":"Comparative assesment of ground plane and strained based FDSOI MOSFET| Primerjalna ocena FDSOI MOSFET-ov z masnim slojem in na osnovi napetega silicija|"},"edm:type":"TEXT","dc:type":[{"@xml:lang":"sl","#text":"znanstveno časopisje"},{"@xml:lang":"en","#text":"journals"},{"@rdf:resource":"http://www.wikidata.org/entity/Q361785"}]},"ore:Aggregation":{"@rdf:about":"http://www.dlib.si/?URN=URN:NBN:SI:doc-GKVJSX8R","edm:aggregatedCHO":{"@rdf:resource":"URN:NBN:SI:doc-GKVJSX8R"},"edm:isShownBy":{"@rdf:resource":"http://www.dlib.si/stream/URN:NBN:SI:doc-GKVJSX8R/d43a5a97-e25a-4e0d-a0bb-97c9420f83a8/PDF"},"edm:rights":{"@rdf:resource":"http://rightsstatements.org/vocab/InC/1.0/"},"edm:provider":"Slovenian National E-content Aggregator","edm:intermediateProvider":{"@xml:lang":"en","#text":"National and University Library of Slovenia"},"edm:dataProvider":{"@xml:lang":"sl","#text":"Strokovno društvo za mikroelektroniko, elektronske sestavne dele in materiale"},"edm:object":{"@rdf:resource":"http://www.dlib.si/streamdb/URN:NBN:SI:doc-GKVJSX8R/maxi/edm"},"edm:isShownAt":{"@rdf:resource":"http://www.dlib.si/details/URN:NBN:SI:doc-GKVJSX8R"}}}}