{"?xml":{"@version":"1.0"},"edm:RDF":{"@xmlns:dc":"http://purl.org/dc/elements/1.1/","@xmlns:edm":"http://www.europeana.eu/schemas/edm/","@xmlns:wgs84_pos":"http://www.w3.org/2003/01/geo/wgs84_pos","@xmlns:foaf":"http://xmlns.com/foaf/0.1/","@xmlns:rdaGr2":"http://rdvocab.info/ElementsGr2","@xmlns:oai":"http://www.openarchives.org/OAI/2.0/","@xmlns:owl":"http://www.w3.org/2002/07/owl#","@xmlns:rdf":"http://www.w3.org/1999/02/22-rdf-syntax-ns#","@xmlns:ore":"http://www.openarchives.org/ore/terms/","@xmlns:skos":"http://www.w3.org/2004/02/skos/core#","@xmlns:dcterms":"http://purl.org/dc/terms/","edm:WebResource":[{"@rdf:about":"http://www.dlib.si/stream/URN:NBN:SI:doc-G9Q24KKW/18841565-6b7d-478f-974b-93e2cae79944/HTML","dcterms:extent":"37 KB"},{"@rdf:about":"http://www.dlib.si/stream/URN:NBN:SI:doc-G9Q24KKW/b15030b4-0fce-4dad-a081-87ebd9c65ecf/PDF","dcterms:extent":"2071 KB"},{"@rdf:about":"http://www.dlib.si/stream/URN:NBN:SI:doc-G9Q24KKW/5a042e47-314b-446e-8922-568ccee24ca3/TEXT","dcterms:extent":"36 KB"}],"edm:TimeSpan":{"@rdf:about":"1992-1999","edm:begin":{"@xml:lang":"en","#text":"1992"},"edm:end":{"@xml:lang":"en","#text":"1999"}},"edm:ProvidedCHO":{"@rdf:about":"URN:NBN:SI:doc-G9Q24KKW","edm:isNextInSequence":{"@rdf:resource":"https://www.dlib.si/details/URN:NBN:SI:doc-1OSRYJTJ"},"dcterms:isPartOf":[{"@rdf:resource":"https://www.dlib.si/details/URN:NBN:SI:spr-QKUCN2BD"},{"@xml:lang":"sl","#text":"Kovine zlitine tehnologije"}],"dcterms:issued":"1997","dc:format":[{"@xml:lang":"sl","#text":"10 strani"},{"@xml:lang":"sl","#text":"letnik:31"},{"@xml:lang":"sl","#text":"številka:6"},{"@xml:lang":"sl","#text":"str. 485-494"}],"dc:identifier":["ISSN:1318-0010","COBISSID:70314","URN:URN:NBN:SI:doc-G9Q24KKW"],"dc:language":"en","dc:publisher":[{"@xml:lang":"sl","#text":"Inštitut za kovinske materiale in tehnologije"},{"@xml:lang":"sl","#text":"Železarna Jesenice"},{"@xml:lang":"sl","#text":"Železarna Ravne"},{"@xml:lang":"sl","#text":"Železarna Štore"}],"dc:subject":[{"@xml:lang":"sl","#text":"kristali"},{"@xml:lang":"sl","#text":"luminiscenca"},{"@xml:lang":"sl","#text":"mikrostruktura"},{"@xml:lang":"sl","#text":"nitridi"},{"@xml:lang":"sl","#text":"Ramanska spektroskopija"},{"@xml:lang":"sl","#text":"rast kristalov"},{"@xml:lang":"sl","#text":"sublimacija"},{"@rdf:resource":"http://www.wikidata.org/entity/Q862228"}],"dcterms:temporal":{"@rdf:resource":"1992-1999"},"dc:title":{"@xml:lang":"sl","#text":"Growth of III-nitrides via sublimation and metalorganic vapor phase epitaxy| Rast III-nitridov s sublimacijo in metalorgansko parno fazno epitaksijo|"},"dc:description":[{"@xml:lang":"sl","#text":"Single crystals of GaN < 3 mm in length were grown by sublimation/recondensation of GaN in 760 Torr ?$NH_3$? at 1100°C. Platelets of AlN < 1 mm thick were similarly grown between 1950 and 2250°C using an Al source. Monocrystalline GaN and ?$Al_xGa_{1-x}N$?(0001)(0.05 < x < 0.96) films were grown via MOVPE on an ?$\\alpha$?(6H)-SiC(0001) wafers with and without, respectively, a 1000 A AlN buffer layer. Photoluminiscence (PL) spectra of GaN showed bound and free excitonic recombinations. Selective growth of hexagonal pyramid arrays of undoped GaN and Si-doped GaN was achieved on 6H-SiC(0001)/AlN/GaN multilayer substrates using a patterned ?$SiO_2$? mask. Field emission of these arrays exhibited a turn-on field of 25 V/?$\\mu$?m for an emission current of 10.8 nA at an anode-to-sample distance of 27 ?$\\mu$?m. Lateral growth and coalescence of GaN have been achieved using stripes oriented along <1100> at 1100°C and a triethylgallium flow rate of 26 mmol/min. Approximately ?$10^9$? ?$cm^{-2}$? dislocations, originating from the underlying GaN/AlN interface, were contained in the GaN grown in the window regions. The overgrowth regions contained a very low density of dislocations"},{"@xml:lang":"sl","#text":"Kristali GaN < 3 mm dolžine so bili izdelani s sublimacijo/rekondenzacijo GaN pri 760 tor. ?$NH_3$? in 1100°C. Ploščice AlN < 1 mm debeline so bile na podoben način izdelane pri 1950 do 2250°C z uporabo Al kot izvora. Monokristalni filmi GaN in ?$Al_xGa_{1-x}N$?(0001) z (0.05 < x < 0.96) so bili izdelani z MVOPE na ?$\\alpha$?(6H)-SiC(0001) vaferjih z in brez 1000 A AlN bufer sloja. Fotoluminiscentni (PL) spektri GaN so pokazali vezi in proste ekscitonske rekombinacije. Selektivna rast združba heksagonalnih piramid nedopiranega GaN in GaN dopiranega s silicijem je bila dosežena na 6H - Si(0001)/AlN/GaN večslojnih substratih z uporabo vzorčastih ?$SiO_2$? mask. Prag polja emisije teh združb je imel jakost 25 V/?$mu$?m za emisijski tok 10.8 nA pri razdalji 27 ?$\\mu$?m med anodo in preizkušancem. Lateralna rast in koalescenca GaN je bila dosežena z uporabo lamel orientiranih vzdolž <1100> pri 1100°C in pretoku trietilgalija 26 mmol/min. V GaN, ki je nastal v področju oken je bilo približno ?$10^9 cm^{-2}$? dislokacij, ki so izvirale iz mejne površine GaN/AlN. Področja večje rasti so imela majhno gostoto dislokacij"}],"edm:type":"TEXT","dc:type":[{"@xml:lang":"sl","#text":"znanstveno časopisje"},{"@xml:lang":"en","#text":"journals"},{"@rdf:resource":"http://www.wikidata.org/entity/Q361785"}]},"ore:Aggregation":{"@rdf:about":"http://www.dlib.si/?URN=URN:NBN:SI:doc-G9Q24KKW","edm:aggregatedCHO":{"@rdf:resource":"URN:NBN:SI:doc-G9Q24KKW"},"edm:isShownBy":{"@rdf:resource":"http://www.dlib.si/stream/URN:NBN:SI:doc-G9Q24KKW/b15030b4-0fce-4dad-a081-87ebd9c65ecf/PDF"},"edm:rights":{"@rdf:resource":"http://rightsstatements.org/vocab/InC/1.0/"},"edm:provider":"Slovenian National E-content Aggregator","edm:dataProvider":{"@xml:lang":"en","#text":"National and University Library of Slovenia"},"edm:object":{"@rdf:resource":"http://www.dlib.si/streamdb/URN:NBN:SI:doc-G9Q24KKW/maxi/edm"},"edm:isShownAt":{"@rdf:resource":"http://www.dlib.si/details/URN:NBN:SI:doc-G9Q24KKW"}}}}