<Record><identifier xmlns="http://purl.org/dc/elements/1.1/">URN:NBN:SI:doc-DWE2ELW0</identifier><date>2006</date><creator>Dąbrowski, Jacek</creator><creator>Zarębski, Janusz</creator><relation>documents/doc/D/URN_NBN_SI_doc-DWE2ELW0_001.pdf</relation><relation>documents/doc/D/URN_NBN_SI_doc-DWE2ELW0_001.txt</relation><format format_type="issue">3</format><format format_type="volume">36</format><format format_type="type">article</format><format format_type="extent">str. 123-126</format><identifier identifier_type="ISSN">0352-9045</identifier><identifier identifier_type="COBISSID">6535764</identifier><identifier identifier_type="URN">URN:NBN:SI:doc-DWE2ELW0</identifier><language>eng</language><publisher>Strokovno društvo za mikroelektroniko, elektronske sestavne dele in materiale</publisher><source>Informacije MIDEM</source><rights>InC</rights><subject language_type_id="slv">diode</subject><subject language_type_id="slv">elektrotermija</subject><subject language_type_id="slv">modeliranje</subject><subject language_type_id="slv">silicijev karbid</subject><subject language_type_id="slv">SPICE</subject><title>D. C. characteristics of SiC power Schottky diodes</title><title>DC karakteristike močnostnih SiC Schottky diod - modeliranje s programom SPICE</title><title>modelling in SPICE</title></Record>