<Record><identifier xmlns="http://purl.org/dc/elements/1.1/">URN:NBN:SI:doc-CI2R2EDV</identifier><date>1995</date><creator>Furlan, Jože</creator><creator>Skubic, Ivan</creator><creator>Smole, Franc</creator><relation>documents/doc/C/URN_NBN_SI_doc-CI2R2EDV_001.pdf</relation><relation>documents/doc/C/URN_NBN_SI_doc-CI2R2EDV_001.txt</relation><format format_type="issue">1</format><format format_type="volume">25</format><format format_type="type">article</format><format format_type="extent">str. 11-15</format><identifier identifier_type="ISSN">0352-9045</identifier><identifier identifier_type="COBISSID">415572</identifier><identifier identifier_type="URN">URN:NBN:SI:doc-CI2R2EDV</identifier><language>slv</language><publisher>Strokovno društvo za mikroelektroniko, elektronske sestavne dele in materiale</publisher><source>Informacije MIDEM</source><rights>InC</rights><subject language_type_id="slv">amorfni silicij</subject><subject language_type_id="slv">kapacitivni efekt</subject><subject language_type_id="slv">polprevodniki</subject><title>Razlaga močnega kapacitivnega efekta v NIN strukturi iz amorfnega silicija</title></Record>