<Record><identifier xmlns="http://purl.org/dc/elements/1.1/">URN:NBN:SI:doc-BFND7YOD</identifier><date>1996</date><creator>Furlan, Jože</creator><creator>Smole, Franc</creator><creator>Topič, Marko</creator><relation>documents/doc/B/URN_NBN_SI_doc-BFND7YOD_001.pdf</relation><relation>documents/doc/B/URN_NBN_SI_doc-BFND7YOD_001.txt</relation><format format_type="volume">26</format><format format_type="issue">3</format><format format_type="type">article</format><format format_type="extent">str. 156-160</format><identifier identifier_type="ISSN">0352-9045</identifier><identifier identifier_type="COBISSID">415828</identifier><identifier identifier_type="URN">URN:NBN:SI:doc-BFND7YOD</identifier><language>eng</language><publisher>Strokovno društvo za mikroelektroniko, elektronske sestavne dele in materiale</publisher><source>Informacije MIDEM</source><rights>InC</rights><subject language_type_id="slv">amorfni silicij</subject><subject language_type_id="slv">gostota stanj</subject><subject language_type_id="slv">polprevodniki</subject><title>Defect pool density-of-states model in numerical modelling of a-Si:H structures</title></Record>