{"?xml":{"@version":"1.0"},"edm:RDF":{"@xmlns:dc":"http://purl.org/dc/elements/1.1/","@xmlns:edm":"http://www.europeana.eu/schemas/edm/","@xmlns:wgs84_pos":"http://www.w3.org/2003/01/geo/wgs84_pos","@xmlns:foaf":"http://xmlns.com/foaf/0.1/","@xmlns:rdaGr2":"http://rdvocab.info/ElementsGr2","@xmlns:oai":"http://www.openarchives.org/OAI/2.0/","@xmlns:owl":"http://www.w3.org/2002/07/owl#","@xmlns:rdf":"http://www.w3.org/1999/02/22-rdf-syntax-ns#","@xmlns:ore":"http://www.openarchives.org/ore/terms/","@xmlns:skos":"http://www.w3.org/2004/02/skos/core#","@xmlns:dcterms":"http://purl.org/dc/terms/","edm:WebResource":[{"@rdf:about":"http://www.dlib.si/stream/URN:NBN:SI:doc-BE3T1ADI/c6a9871e-80e1-483c-9fa8-0a92a6749ff2/HTML","dcterms:extent":"25 KB"},{"@rdf:about":"http://www.dlib.si/stream/URN:NBN:SI:doc-BE3T1ADI/4abe1adf-9bb1-4a03-a034-1b50af421dcb/PDF","dcterms:extent":"2667 KB"},{"@rdf:about":"http://www.dlib.si/stream/URN:NBN:SI:doc-BE3T1ADI/59b92d68-12f4-4c2f-8c06-154584d99529/TEXT","dcterms:extent":"23 KB"}],"edm:TimeSpan":{"@rdf:about":"1981-2022","edm:begin":{"@xml:lang":"en","#text":"1981"},"edm:end":{"@xml:lang":"en","#text":"2022"}},"edm:ProvidedCHO":{"@rdf:about":"URN:NBN:SI:doc-BE3T1ADI","dcterms:isPartOf":[{"@rdf:resource":"https://www.dlib.si/details/URN:NBN:SI:spr-I8EIVSM5"},{"@xml:lang":"sl","#text":"Vakuumist"}],"dcterms:issued":"2001","dc:creator":"Kovač, Janez","dc:format":[{"@xml:lang":"sl","#text":"številka:1"},{"@xml:lang":"sl","#text":"letnik:21"},{"@xml:lang":"sl","#text":"5 strani"},{"@xml:lang":"sl","#text":"str. 4-8"}],"dc:identifier":["ISSN:0351-9716","COBISSID:15963687","URN:URN:NBN:SI:doc-BE3T1ADI"],"dc:language":"sl","dc:publisher":{"@xml:lang":"sl","#text":"Društvo za vakuumsko tehniko Slovenije"},"dc:subject":[{"@xml:lang":"sl","#text":"električne lastnosti"},{"@xml:lang":"sl","#text":"elektromigracija"},{"@xml:lang":"sl","#text":"fazne meje"},{"@xml:lang":"sl","#text":"interakcije"},{"@xml:lang":"sl","#text":"kovine"},{"@xml:lang":"sl","#text":"polprevodniki"},{"@xml:lang":"sl","#text":"tanke plasti"},{"@rdf:resource":"http://www.wikidata.org/entity/Q11456"}],"dcterms:temporal":{"@rdf:resource":"1981-2022"},"dc:title":{"@xml:lang":"sl","#text":"Fazna meja kovina/polprevodnik| Metal/semiconductor interfce|"},"dc:description":[{"@xml:lang":"sl","#text":"Electrical properties of metal/semiconductor junctions depend on caracteristics of the interface between materials. Methods for surface characterisation can be used to investigate model interfaces as a thin adsorbed layer of metal that can be complementary to the measurements of electrical characteristics (I-U, C-U). We present a study performed in order to improve the understanding of microocopic morphological effects during the formation and evolution of metal/semiconductor interfaces and electronic properties of these interfaces. For this purpose we studied the interaction between deposited Au thin films and interfaces Ag/Si(111) containing different morphological phases formed at elevated temperatures. By means of spatially resolved Si 2p, Ag 3d and Au 4f photoelectron spectra, obtained with the new photoelectron microscope at the Elettra synchrotron radiation facility, the composition and chemical status at interfaces were examined. The electronic properties of diffrent phases were deduced from the shift of the Si 2p and valence band spectra"},{"@xml:lang":"sl","#text":"Elektronske lastnosti spoja kovina/polprevodnik so odvisne od naravne faze meje med materialoma. Z metodami za preiskavo površin lahko preiskujemo modelno fazno mejo, kot je tanka adsorbirana plast kovine, kar pomeni začetno fazo nastajajna spoja kovina/polprevodnik. Ta mikroskopski način je lahko komplementaren k meritvam električnih karakteristik spoja (I-U, C-U). Da bi prispevali k razumevanju mikroskopskih vplivov morfologije na nastanek fazne meje kovina/polprevodnik in na elektronske lastnosti na meji smo preiskali interakcijo med naparjeno kovinsko plastjo Au in različnimi morfološkimi fazami na meji Ag/Si(111), ki nastanejo pri povišani temperaturi. Iz fotoelektronskih spektrov Si 2p, Ag 3d in Au 4f, dobljenih s fotoelektronskim mikroskopom na sinhrotronu Elettra, smo sklepali na sestavo, kemijsko stanje in iz premika spektra Si 2p ter valenčnega pasu na elektronske lastnosti različnih faz"}],"edm:type":"TEXT","dc:type":[{"@xml:lang":"sl","#text":"znanstveno časopisje"},{"@xml:lang":"en","#text":"journals"},{"@rdf:resource":"http://www.wikidata.org/entity/Q361785"}]},"ore:Aggregation":{"@rdf:about":"http://www.dlib.si/?URN=URN:NBN:SI:doc-BE3T1ADI","edm:aggregatedCHO":{"@rdf:resource":"URN:NBN:SI:doc-BE3T1ADI"},"edm:isShownBy":{"@rdf:resource":"http://www.dlib.si/stream/URN:NBN:SI:doc-BE3T1ADI/4abe1adf-9bb1-4a03-a034-1b50af421dcb/PDF"},"edm:rights":{"@rdf:resource":"http://rightsstatements.org/vocab/InC/1.0/"},"edm:provider":"Slovenian National E-content Aggregator","edm:intermediateProvider":{"@xml:lang":"en","#text":"National and University Library of Slovenia"},"edm:dataProvider":{"@xml:lang":"sl","#text":"Društvo za vakuumsko tehniko Slovenije"},"edm:object":{"@rdf:resource":"http://www.dlib.si/streamdb/URN:NBN:SI:doc-BE3T1ADI/maxi/edm"},"edm:isShownAt":{"@rdf:resource":"http://www.dlib.si/details/URN:NBN:SI:doc-BE3T1ADI"}}}}