<Record><identifier xmlns="http://purl.org/dc/elements/1.1/">URN:NBN:SI:doc-7AGI8CZS</identifier><date>1998</date><creator>Amon, Slavko</creator><creator>Sokolić, Saša</creator><relation>documents/doc/7/URN_NBN_SI_doc-7AGI8CZS_001.pdf</relation><relation>documents/doc/7/URN_NBN_SI_doc-7AGI8CZS_001.txt</relation><format format_type="volume">28</format><format format_type="issue">4</format><format format_type="type">article</format><format format_type="extent">str. 211-217</format><identifier identifier_type="ISSN">0352-9045</identifier><identifier identifier_type="COBISSID">1353556</identifier><identifier identifier_type="URN">URN:NBN:SI:doc-7AGI8CZS</identifier><language>eng</language><publisher>Strokovno društvo za mikroelektroniko, elektronske sestavne dele in materiale</publisher><source>Informacije MIDEM</source><rights>InC</rights><subject language_type_id="slv">germanij</subject><subject language_type_id="slv">numerično modeliranje</subject><subject language_type_id="slv">polprevodniki</subject><subject language_type_id="slv">silicij</subject><subject language_type_id="slv">tranzistorji</subject><title>Modeli za transport nosilcev v bazi npn SiGe heterospojnega transistorja</title><title>Models for carrier transport in the base of npn SiGe HBTs</title></Record>