37 KB1473 KB17 KB200020242003Ghorbani, HamidStoyan, Dietrichletnik:22številka:36 stranistr. 147-152ISSN:1580-3139COBISSID:17239513URN:URN:NBN:SI:doc-WOV1R8KNenDruštvo za stereologijo in kvantitativno analizo slike, Medicinska fakultetaImage analysis and stereologyCluster AnalysisdelciDelec, velikostdislokacijekroglemodeliParticle SizePoissonov procesProbabilitySilicijSiliconSkupek, analizaVerjetnostEstimation the intensity of germ-grain models with overlapping grains|Formulas are derived for the spherical contact distribution of a planar germ-grain model Z with circular grains where the germs form either a "segmentcluster" process or a "line-based" Poisson point process. They are used in order to estimate the intensity lambda of the germ process by means ofthe spherical contact distribution function. As an application the number ofdislocations on a silicon wafer is estimatedTEXTznanstveno časopisjejournalsSlovenian National E-content AggregatorNational and University Library of SloveniaDruštvo za stereologijo in kvantitativno analizo slike