<Record><identifier xmlns="http://purl.org/dc/elements/1.1/">URN:NBN:SI:DOC-WC5Z6CLI</identifier><date>1997</date><creator>Behammer, Dag</creator><creator>Gruhle, A.</creator><creator>König, U.</creator><creator>Schüppen, A.</creator><relation>documents/doc/W/URN_NBN_SI_doc-WC5Z6CLI_001.pdf</relation><relation>documents/doc/W/URN_NBN_SI_doc-WC5Z6CLI_001.txt</relation><format format_type="volume">27</format><format format_type="issue">4</format><format format_type="type">article</format><format format_type="extent">str. 251-259</format><identifier identifier_type="ISSN">0352-9045</identifier><identifier identifier_type="COBISSID">1254996</identifier><identifier identifier_type="URN">URN:NBN:SI:doc-WC5Z6CLI</identifier><language>eng</language><publisher>Strokovno društvo za mikroelektroniko, elektronske sestavne dele in materiale</publisher><source>Informacije MIDEM</source><rights>InC</rights><subject language_type_id="slv">germanij</subject><subject language_type_id="slv">integrirana vezja</subject><subject language_type_id="slv">mikroelektronika</subject><subject language_type_id="slv">polprevodniki</subject><subject language_type_id="slv">silicij</subject><subject language_type_id="slv">tranzistorji</subject><title>key technologies and applications in communication systems</title><title>ključne tehnologije in uporaba v komunikacijskih sistemih</title><title>SiGe heterospojni bipolarni tranzistorji</title><title>SiGe-heterojunction bipolar transistors</title></Record>