<Record><identifier xmlns="http://purl.org/dc/elements/1.1/">URN:NBN:SI:DOC-RSKJJ0JR</identifier><date>2018</date><creator>Vukić, Vladimir Đ.</creator><relation>documents/doc/R/URN_NBN_SI_doc-RSKJJ0JR_001.pdf</relation><relation>documents/doc/R/URN_NBN_SI_doc-RSKJJ0JR_001.txt</relation><format format_type="issue">3</format><format format_type="volume">48</format><format format_type="type">article</format><format format_type="extent">str. 181-193</format><identifier identifier_type="ISSN">0352-9045</identifier><identifier identifier_type="COBISSID">305086208</identifier><identifier identifier_type="URN">URN:NBN:SI:doc-RSKJJ0JR</identifier><language>eng</language><publisher>Strokovno društvo za mikroelektroniko, elektronske sestavne dele in materiale</publisher><source>Informacije MIDEM</source><rights>InC</rights><subject language_type_id="slv">bazni tok</subject><subject language_type_id="slv">ionsko sevanje</subject><subject language_type_id="slv">napetostni regulator</subject><subject language_type_id="slv">ojačenje emitorskega toka</subject><subject language_type_id="slv">simulacije</subject><subject language_type_id="slv">vertikalni tranzistor PNP</subject><title>Computer simulation model for evaluation of radiation and post-irradiation effects in voltage regulator with vertical PNP power transistor</title><title>Računalniški simulacijski model za ocenjevanje sevalnih in post sevalnih vplivov na napetostni regulator z vertikalnim močnosnim tranzistorjem PNP</title></Record>