<Record><identifier xmlns="http://purl.org/dc/elements/1.1/">URN:NBN:SI:DOC-RGAMAXGM</identifier><date>2018</date><creator>Balent, Jošt</creator><creator>Krč, Janez</creator><creator>Topič, Marko</creator><relation>documents/doc/R/URN_NBN_SI_doc-RGAMAXGM_001.pdf</relation><relation>documents/doc/R/URN_NBN_SI_doc-RGAMAXGM_001.txt</relation><format format_type="type">article</format><format format_type="extent">Str. 182-185</format><identifier identifier_type="COBISSID_HOST">12334164</identifier><identifier identifier_type="ISSN">2591-0442</identifier><identifier identifier_type="URN">URN:NBN:SI:doc-RGAMAXGM</identifier><language>eng</language><publisher>Društvo Slovenska sekcija IEEE</publisher><source>Zbornik mednarodne Elektrotehniške in računalniške konference</source><rights>InC</rights><subject language_type_id="slv">amorfni silicij</subject><subject language_type_id="eng">amorphous silicon</subject><subject language_type_id="eng">crystalline silicon</subject><subject language_type_id="eng">electrical simulations</subject><subject language_type_id="slv">električne simulacije</subject><subject language_type_id="eng">heterojunction</subject><subject language_type_id="slv">heterospoj</subject><subject language_type_id="slv">kristalni silicij</subject><subject language_type_id="eng">recombination</subject><subject language_type_id="slv">rekombinacije</subject><title>Analysis of mesh density in electrical simulations of heterojunction silicon solar cells</title></Record>