{"?xml":{"@version":"1.0"},"edm:RDF":{"@xmlns:dc":"http://purl.org/dc/elements/1.1/","@xmlns:edm":"http://www.europeana.eu/schemas/edm/","@xmlns:wgs84_pos":"http://www.w3.org/2003/01/geo/wgs84_pos","@xmlns:foaf":"http://xmlns.com/foaf/0.1/","@xmlns:rdaGr2":"http://rdvocab.info/ElementsGr2","@xmlns:oai":"http://www.openarchives.org/OAI/2.0/","@xmlns:owl":"http://www.w3.org/2002/07/owl#","@xmlns:rdf":"http://www.w3.org/1999/02/22-rdf-syntax-ns#","@xmlns:ore":"http://www.openarchives.org/ore/terms/","@xmlns:skos":"http://www.w3.org/2004/02/skos/core#","@xmlns:dcterms":"http://purl.org/dc/terms/","edm:WebResource":[{"@rdf:about":"http://www.dlib.si/stream/URN:NBN:SI:DOC-L0G9FY09/9818d553-1a15-4b6a-94cc-7b247eb64260/PDF","dcterms:extent":"1596 KB"},{"@rdf:about":"http://www.dlib.si/stream/URN:NBN:SI:DOC-L0G9FY09/5392a652-2d73-492b-ae9b-3d01d632cec8/TEXT","dcterms:extent":"30 KB"}],"edm:TimeSpan":{"@rdf:about":"1985-2026","edm:begin":{"@xml:lang":"en","#text":"1985"},"edm:end":{"@xml:lang":"en","#text":"2026"}},"edm:ProvidedCHO":{"@rdf:about":"URN:NBN:SI:DOC-L0G9FY09","dcterms:isPartOf":[{"@rdf:resource":"https://www.dlib.si/details/URN:NBN:SI:spr-Z2J12Z6C"},{"@xml:lang":"sl","#text":"Informacije MIDEM"}],"dcterms:issued":"2025","dc:creator":["Babaeian Far, Morteza","Kaçar, Firat","Ormanci, Mehmet Aytug"],"dc:format":[{"@xml:lang":"sl","#text":"številka:1"},{"@xml:lang":"sl","#text":"letnik:55"},{"@xml:lang":"sl","#text":"str. 55-64"}],"dc:identifier":["ISSN:0352-9045","DOI:10.33180/InfMIDEM2025.105","COBISSID_HOST:281427203","URN:URN:NBN:SI:doc-L0G9FY09"],"dc:language":"en","dc:publisher":{"@xml:lang":"sl","#text":"Strokovno društvo za mikroelektroniko, elektronske sestavne dele in materiale"},"dc:subject":[{"@xml:lang":"en","#text":"32nm finfet technology"},{"@xml:lang":"sl","#text":"32nm FinFET tehnologija"},{"@xml:lang":"en","#text":"complementary folded-cascode amplifier"},{"@xml:lang":"en","#text":"double dynamic switching bias"},{"@xml:lang":"sl","#text":"dvojno dinamično preklapljanje polarizacije"},{"@xml:lang":"sl","#text":"komplementarni kaskodni ojačevalnik"},{"@xml:lang":"sl","#text":"preklopni kondenzator"},{"@xml:lang":"en","#text":"self-cascode"},{"@xml:lang":"en","#text":"switched capacitor"}],"dcterms:temporal":{"@rdf:resource":"1985-2026"},"dc:title":{"@xml:lang":"sl","#text":"Design and optimization of multiple-channel double dynamic switching biased Op-Amp for switched capacitor integrator using FinFET technology| Načrtovanje in optimizacija večkanalnega dvojnega dinamičnega preklopnega optičnega ojačevalnika za stikalni kondenzatorski integrator z uporabo tehnologije FinFET|"},"dc:description":[{"@xml:lang":"sl","#text":"This paper presents the design and optimization of a parametric multiple-channel Double Dynamic Switching Biased Complementary Folded-Cascode Amplifier with switched capacitor integrator application in 32nm FinFET technology. The LTspice simulations demonstrate that the amplifier can attain an open-loop DC gain of 44.8dB, and a phase margin of about 87.8° with ±0.5V supply voltages. Moreover, the amplifier power consumption is measured 246µW including bias circuitry and a Gain-Bandwidth Product (GBW) of 77.45MHz under a 5pF load capacitor. The circuit’s stability enables it to offer diverse design capabilities tailored to specific application needs. This novel design is capable of reducing supply voltages and power dissipation"},{"@xml:lang":"sl","#text":"Članek predstavlja načrtovanje in optimizacijo parametričnega večkanalnega ojačevalnika z dvojnim dinamičnim preklopom, ki se opira na komponente z zloženo kaskodo, z uporabo integratorja s preklopnim kondenzatorjem v 32 nm tehnologiji FinFET. Simulacije LTspice kažejo, da lahko ojačevalnik doseže ojačenje z odprto zanko DC 44,8 dB in fazno rezervo približno 87,8° pri napajalnih napetostih ±0,5 V. Poleg tega je izmerjena poraba energije ojačevalnika 246 µW, vključno z napajalnim vezjem in GBW 77,45 MHz pri obremenitvenem kondenzatorju 5pF. Stabilnost vezja omogoča diverzno načrtovanje s prilagoditvami glede na potrebe aplikacije. Ta nova zasnova lahko zmanjša napajalne napetosti in porabo"}],"edm:type":"TEXT","dc:type":[{"@xml:lang":"sl","#text":"znanstveno časopisje"},{"@xml:lang":"en","#text":"journals"},{"@rdf:resource":"http://www.wikidata.org/entity/Q361785"}]},"ore:Aggregation":{"@rdf:about":"http://www.dlib.si/?URN=URN:NBN:SI:DOC-L0G9FY09","edm:aggregatedCHO":{"@rdf:resource":"URN:NBN:SI:DOC-L0G9FY09"},"edm:isShownBy":{"@rdf:resource":"http://www.dlib.si/stream/URN:NBN:SI:DOC-L0G9FY09/9818d553-1a15-4b6a-94cc-7b247eb64260/PDF"},"edm:rights":{"@rdf:resource":"http://creativecommons.org/licenses/by/4.0/"},"edm:provider":"Slovenian National E-content Aggregator","edm:intermediateProvider":{"@xml:lang":"en","#text":"National and University Library of Slovenia"},"edm:dataProvider":{"@xml:lang":"sl","#text":"Strokovno društvo za mikroelektroniko, elektronske sestavne dele in materiale"},"edm:object":{"@rdf:resource":"http://www.dlib.si/streamdb/URN:NBN:SI:DOC-L0G9FY09/maxi/edm"},"edm:isShownAt":{"@rdf:resource":"http://www.dlib.si/details/URN:NBN:SI:DOC-L0G9FY09"}}}}