{"?xml":{"@version":"1.0"},"edm:RDF":{"@xmlns:dc":"http://purl.org/dc/elements/1.1/","@xmlns:edm":"http://www.europeana.eu/schemas/edm/","@xmlns:wgs84_pos":"http://www.w3.org/2003/01/geo/wgs84_pos","@xmlns:foaf":"http://xmlns.com/foaf/0.1/","@xmlns:rdaGr2":"http://rdvocab.info/ElementsGr2","@xmlns:oai":"http://www.openarchives.org/OAI/2.0/","@xmlns:owl":"http://www.w3.org/2002/07/owl#","@xmlns:rdf":"http://www.w3.org/1999/02/22-rdf-syntax-ns#","@xmlns:ore":"http://www.openarchives.org/ore/terms/","@xmlns:skos":"http://www.w3.org/2004/02/skos/core#","@xmlns:dcterms":"http://purl.org/dc/terms/","edm:WebResource":[{"@rdf:about":"http://www.dlib.si/stream/URN:NBN:SI:DOC-KRFF67C8/9d46fe18-d1e7-4e7a-bcad-b4cbac33d434/PDF","dcterms:extent":"952 KB"},{"@rdf:about":"http://www.dlib.si/stream/URN:NBN:SI:DOC-KRFF67C8/166fdef1-e704-427c-866e-4b0ffde8c725/TEXT","dcterms:extent":"27 KB"}],"edm:TimeSpan":{"@rdf:about":"1985-2025","edm:begin":{"@xml:lang":"en","#text":"1985"},"edm:end":{"@xml:lang":"en","#text":"2025"}},"edm:ProvidedCHO":{"@rdf:about":"URN:NBN:SI:DOC-KRFF67C8","dcterms:isPartOf":[{"@rdf:resource":"https://www.dlib.si/details/URN:NBN:SI:spr-Z2J12Z6C"},{"@xml:lang":"sl","#text":"Informacije MIDEM"}],"dcterms:issued":"2000","dc:creator":"Zalar, Anton","dc:format":[{"@xml:lang":"sl","#text":"letnik:30"},{"@xml:lang":"sl","#text":"številka:4"},{"@xml:lang":"sl","#text":"str. 203-209"}],"dc:identifier":["ISSN:0352-9045","COBISSID:2234964","URN:URN:NBN:SI:doc-KRFF67C8"],"dc:language":"en","dc:publisher":{"@xml:lang":"sl","#text":"Strokovno društvo za mikroelektroniko, elektronske sestavne dele in materiale"},"dc:subject":[{"@xml:lang":"sl","#text":"AES"},{"@xml:lang":"sl","#text":"Augerjeva spektroskopija"},{"@xml:lang":"sl","#text":"karakterizacija materialov"},{"@xml:lang":"sl","#text":"naprševanje"},{"@xml:lang":"sl","#text":"polprevodniki"},{"@xml:lang":"sl","#text":"tanke plasti"}],"dcterms:temporal":{"@rdf:resource":"1985-2025"},"dc:title":{"@xml:lang":"sl","#text":"Materials characterization by Auger electron spectroscopy sputter depth profiling| Karakterizacija materialov z Augerjevo elektronsko-spektroskopsko (AES) profilno analizo|"},"dc:description":[{"@xml:lang":"sl","#text":"Depth profiling by ion sputtering in combination with Auger electron spectroscopy (AES) has become a valuable analytical tool in microelectronics and those areas of research and technology where the chemical composition of surfaces, interfaces and thin films is of importance. Its application range from fundamental surface and interface studies to thin-film structures for electronic and microelectronic devices, wear- and corrosion-resistant coatings, surfaces modified by plasma technique or ion implantation, etc. Reactions at surfaces as well as resulting electrical and mechanical properties can only be understood if the relevant chemical and structural changes in the investigated thin-film structures are known. This requires a quantitative spatially resolved analysis and in-depth distribution of chemical composition with a high depth distribution of chemical composition with a high depth resolution. However, ion sputtering is not an ideal layer-by-layer erosion but is a result of a complex ion beam-sample interaction proacess. Various phenomena, the most important of which are due to ion beam induced changes of surface roughness and composition, limit the experimentally achievable resolution. The principles of the method and its fundamental capabilities and limitations will be discussed. The applicability of the AES depth profiling in microelectronics and some other technical fields will be illustrated by depth profiles of the characteristic samples"},{"@xml:lang":"sl","#text":"Profilna analiza v kombinaciji ionskega jedkanja s spektroskopijo Augerjevih elektronov je postala zelo uporabno analitsko orodje v mikroelektroniki in na tistih področjih preiskav in tehnologij, kjer je pomembna kemična sestava površin, faznih mej in tankih plasti. Uporablja se za temeljne preiskave površin in faznih mej, kakor tudi za preiskavo tankoplastnih struktur za elektronske in mikroelektronske naprave, za obrabno in korozijsko obstojne prevleke, površine obdelane s plazemsko tehniko ali implantacijo, itd. Reakcije na površinah in z njimi povezane električne in mehanske lastnosti lahko razumemo samo, če so poznane ustrezne kemične in strukturne spremembe v tankoplastnih strukturah. To zahteva kvantitativno prostorsko ločljivo analizo in globinsko porazdelitev kemične sestave z veliko globinsko ločljivostjo. Pri tem moramo vedeti, da ionsko jedkanje ne predstavlja idealnega primera odstranjevanja plasti za plastjo, ampak je to rezultat kompleksne interakcije ionskega curka s preiskovanim vzorcem. Različni pojavi, od katerih sta najpomembnejša sprememba hrapavosti in sestave, povzročena z ionskim curkom, omejujejo eksperimentalno dobljeno ločljivost. V delu so obravnavani principi metode in njena zmogljivost ter omejitve. Uporabnost AES profilne analize v mikroelektroniki in na nekaterih drugih tehničnih področjih je ilustrirana z globinskimi profili karakterističnih vzorcev"}],"edm:type":"TEXT","dc:type":[{"@xml:lang":"sl","#text":"znanstveno časopisje"},{"@xml:lang":"en","#text":"journals"},{"@rdf:resource":"http://www.wikidata.org/entity/Q361785"}]},"ore:Aggregation":{"@rdf:about":"http://www.dlib.si/?URN=URN:NBN:SI:DOC-KRFF67C8","edm:aggregatedCHO":{"@rdf:resource":"URN:NBN:SI:DOC-KRFF67C8"},"edm:isShownBy":{"@rdf:resource":"http://www.dlib.si/stream/URN:NBN:SI:DOC-KRFF67C8/9d46fe18-d1e7-4e7a-bcad-b4cbac33d434/PDF"},"edm:rights":{"@rdf:resource":"http://rightsstatements.org/vocab/InC/1.0/"},"edm:provider":"Slovenian National E-content Aggregator","edm:intermediateProvider":{"@xml:lang":"en","#text":"National and University Library of Slovenia"},"edm:dataProvider":{"@xml:lang":"sl","#text":"Strokovno društvo za mikroelektroniko, elektronske sestavne dele in materiale"},"edm:object":{"@rdf:resource":"http://www.dlib.si/streamdb/URN:NBN:SI:DOC-KRFF67C8/maxi/edm"},"edm:isShownAt":{"@rdf:resource":"http://www.dlib.si/details/URN:NBN:SI:DOC-KRFF67C8"}}}}