URN:NBN:SI:DOC-IX5HYTZR2011Chaudhry, AmitRoy, Jatindra NathSangwan, Sonudocuments/doc/I/URN_NBN_SI_doc-IX5HYTZR_001.htmdocuments/doc/I/URN_NBN_SI_doc-IX5HYTZR_001.pdfdocuments/doc/I/URN_NBN_SI_doc-IX5HYTZR_001.txt578articlestr. 298-3030013-58522232-3236262390272URN:NBN:SI:doc-IX5HYTZRslvElektrotehniška zveza SlovenijeElektrotehniški vestnikInCCMOSmikroelektronikaMobility modeling in a p-MOSFET under uniaxial stress