<Record><identifier xmlns="http://purl.org/dc/elements/1.1/">URN:NBN:SI:DOC-B75DHUI9</identifier><date>1997</date><creator>Cindro, Vladimir</creator><creator>Mikuž, Marko</creator><relation>documents/doc/B/URN_NBN_SI_doc-B75DHUI9_001.pdf</relation><relation>documents/doc/B/URN_NBN_SI_doc-B75DHUI9_001.txt</relation><format format_type="volume">27</format><format format_type="issue">3</format><format format_type="type">article</format><format format_type="extent">str. 177-181</format><identifier identifier_type="ISSN">0352-9045</identifier><identifier identifier_type="COBISSID">12891943</identifier><identifier identifier_type="URN">URN:NBN:SI:doc-B75DHUI9</identifier><language>eng</language><publisher>Strokovno društvo za mikroelektroniko, elektronske sestavne dele in materiale</publisher><source>Informacije MIDEM</source><rights>InC</rights><subject language_type_id="slv">detektorji</subject><subject language_type_id="slv">ionizirajoče sevanje</subject><subject language_type_id="slv">polprevodniki</subject><subject language_type_id="slv">poškodbe</subject><subject language_type_id="slv">silicij</subject><title>Radiacijske poškodbe v mikropasovnih detektorjih</title><title>Radiation damage in Si microstrip detectors</title></Record>