<?xml version="1.0"?><rdf:RDF xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:edm="http://www.europeana.eu/schemas/edm/" xmlns:wgs84_pos="http://www.w3.org/2003/01/geo/wgs84_pos" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:rdaGr2="http://rdvocab.info/ElementsGr2" xmlns:oai="http://www.openarchives.org/OAI/2.0/" xmlns:owl="http://www.w3.org/2002/07/owl#" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:ore="http://www.openarchives.org/ore/terms/" xmlns:skos="http://www.w3.org/2004/02/skos/core#" xmlns:dcterms="http://purl.org/dc/terms/"><edm:WebResource rdf:about="http://www.dlib.si/stream/URN:NBN:SI:DOC-6BT9NC0O/cc5eaff3-04b4-4b93-b9b6-cd1e8b2ced2f/PDF"><dcterms:extent>2552 KB</dcterms:extent></edm:WebResource><edm:WebResource rdf:about="http://www.dlib.si/stream/URN:NBN:SI:DOC-6BT9NC0O/b63f4f53-d1c9-41ba-a25b-50c4871be649/TEXT"><dcterms:extent>28 KB</dcterms:extent></edm:WebResource><edm:ProvidedCHO rdf:about="URN:NBN:SI:DOC-6BT9NC0O"><dcterms:issued>2024</dcterms:issued><dc:creator>Huo, Honglei</dc:creator><dc:format xml:lang="sl">številka:1</dc:format><dc:format xml:lang="sl">letnik:54</dc:format><dc:format xml:lang="sl">str. 65-73</dc:format><dc:identifier>ISSN:0352-9045</dc:identifier><dc:identifier>DOI:10.33180/InfMIDEM2024.106</dc:identifier><dc:identifier>COBISSID:245622787</dc:identifier><dc:identifier>URN:URN:NBN:SI:doc-6BT9NC0O</dc:identifier><dc:language>en</dc:language><dc:publisher xml:lang="sl">Strokovno društvo za mikroelektroniko, elektronske sestavne dele in materiale</dc:publisher><dc:source xml:lang="sl">Informacije MIDEM</dc:source><dc:subject xml:lang="sl">heterovratni dielektrik</dc:subject><dc:subject xml:lang="sl">negativna diferencialna upornost</dc:subject><dc:subject xml:lang="sl">poljski tranzistor z negativno kapacitivnostjo</dc:subject><dc:subject xml:lang="sl">visoka dielektrična konstanta</dc:subject><dc:title xml:lang="sl">Analysis and mitigation of negative differential resistance effects with hetero-gate dielectric layer in negative-capacitance field-effect transistors| Analiza in ublažitev učinkov negativne diferencialne upornosti s hetero-vratno dielektrično plastjo v poljskih tranzistorjih z negativno kapacitivnostjo|</dc:title><edm:type>TEXT</edm:type><dc:type xml:lang="sl">znanstveno časopisje</dc:type><dc:type xml:lang="en">journals</dc:type><dc:type rdf:resource="http://www.wikidata.org/entity/Q361785" /></edm:ProvidedCHO><ore:Aggregation rdf:about="http://www.dlib.si/?URN=URN:NBN:SI:DOC-6BT9NC0O"><edm:aggregatedCHO rdf:resource="URN:NBN:SI:DOC-6BT9NC0O" /><edm:isShownBy rdf:resource="http://www.dlib.si/stream/URN:NBN:SI:DOC-6BT9NC0O/cc5eaff3-04b4-4b93-b9b6-cd1e8b2ced2f/PDF" /><edm:rights rdf:resource="http://creativecommons.org/licenses/by/4.0/" /><edm:provider>Slovenian National E-content Aggregator</edm:provider><edm:intermediateProvider xml:lang="en">National and University Library of Slovenia</edm:intermediateProvider><edm:dataProvider xml:lang="sl">Strokovno društvo za mikroelektroniko, elektronske sestavne dele in materiale</edm:dataProvider><edm:object rdf:resource="http://www.dlib.si/streamdb/URN:NBN:SI:DOC-6BT9NC0O/maxi/edm" /><edm:isShownAt rdf:resource="http://www.dlib.si/details/URN:NBN:SI:DOC-6BT9NC0O" /></ore:Aggregation></rdf:RDF>