12 KB73 KB10 KB200020242000Buhvald, AlojzKaker, HenrikPerovnik, Vlado3 straništevilka:3/4letnik:34str. 157-159ISSN:1580-2949COBISSID:222122URN:URN:NBN:SI:doc-5MAVQMELslInštitut za kovinske materiale in tehnologijeMateriali in tehnologijeelektronski mikroskopsimulacijetanke plastiMeritev debeline tankih plasti v SEM s signalom povratno sipanih elektronov| Measurements of thin film thickness in SEM with backscattered electrons|The basis for the analysis with backscattered (BSE) in scanning electron microscope (SEM) is monotonous increase of the backscattering coefficient with the atomic number of elements. The goal of this work was to test the usefulness of the measurements of thin films thickness in scanning electron microscope (SEM) a tool for routine analysis. As practical example of thin film thickness analysis we measured thickness ov vacuum evaporated Cu thin films on PET (polyethylene-terephthalate) substrate. The thickness of thin films calculated by the Monte Carlo method and by the formula of Hunger and Rogaschewski are in good agreement, while the Niedrig - Reuter model gives much too low values compared with the measured experimental dataOsnova analize s povratno sipanimi elektroni (PSE) v vrstičnem elektronskem mikroskopu (SEM) je monotono naraščanje koeficienta povratnega sipanja z atomskim številom vzorca. Kot praktičen primer analize s PSE smo merili debelino vakuumsko napaarjenih tankih plasti Cu na podlagi iz 0,1 mm debele PET (polietilen-tereftalat) - folije. Debeline tankih plasti, izračunane z metodo Monte Carlo, po formuli Hungerja - Rogaschewskega, se dokaj dobro skladajo med seboj in z meritvami tankih plasti Cu na organski podlagi, medtem ko so rezultati po formuli Niedriga in Reuterja bistveno premajhniTEXTznanstveno časopisjejournalsSlovenian National E-content AggregatorNational and University Library of SloveniaInštitut za kovinske materiale in tehnologije