Effect of absorption layer thickness on internal quantum efficiency of zero-bias waveguide photodetectors

URN:NBN:SI:DOC-2ZL1Z2K22009Karim, Abiddocuments/doc/2/URN_NBN_SI_doc-2ZL1Z2K2_001.pdfdocuments/doc/2/URN_NBN_SI_doc-2ZL1Z2K2_001.txt339articlestr. 132-1340352-90457578452URN:NBN:SI:doc-2ZL1Z2K2engStrokovno društvo za mikroelektroniko, elektronske sestavne dele in materialeInformacije MIDEMInCfotodetekcijafotodetektorjifotodiodaEffect of absorption layer thickness on internal quantum efficiency of zero-bias waveguide photodetectorsVpliv debeline absorpcijske plasti na kvantno učinkovitost fotodetektorja z valovodom